BCP080T datasheet(2/5 Pages) BEREX

2 / 5 page

www.berex.com

BeRex, Inc. 1735 North 1

st Street #302 San Jose, CA 95112 tel. (408) 452-5595

September 2011

Specifications are subject to change without notice. ©BeRex 2011

Rev. 1.2

BCP080T

ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C

SYMBOL

PARAMETER/TEST CONDITIONS

TEST

FREQ.

MIN.

TYPICAL

MAX.

UNIT

P1dB

Output Power @ P1dB (Vds = 8V, Ids = 50%

Idss)

12 GHz

18 GHz

27.5

28.5

28.0

dBm

G1dB

Gain @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHz

18 GHz

10.5

11.5

8.0

PAE

PAE @ P1dB (Vds = 8V, Ids = 50% Idss)

12 GHz

18 GHz

Idss

Saturated Drain Current (Vgs = 0V, Vds = 1.0V)

160

240

320

Transconductance (Vds = 3V, Vgs = 50% Idss)

320

Pinch-off Voltage (Ids = 800 µA, Vds = 2V)

-2.5

-1.1

-0.5

BVgd

Drain Breakdown Voltage (Igd = 0.8 mA, source open)

-15

- 12.0

BVgs

Source Breakdown Voltage (Ig = 0.8 mA, drain open)

-13

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

° C/W

MAXIMUM RATING (Ta = 25° C)

SYMBOLS

PARAMETERS

ABSOLUTE

CONTINUOUS

Vds

Vgs

Ids

Igsf

Tch

Tstg

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Forward Gate Current

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation

12 V

-6 V

Idss

40 mA

27 dBm

175° C

-60° C - 150° C

3.0 W

8 V

-3 V

Idss

7 mA

@ 3dB compression

150° C

-60° C - 150° C

2.5 W

Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.

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