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2N3771 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3771 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEX Collector-Emitter Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 7.5 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
Ähnliche Teilenummer - 2N3771 |
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Ähnliche Beschreibung - 2N3771 |
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