2N5655 datasheet(1/3 Pages) ISC

Teilenummer	2N5655

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5655 2N5656 2N5657

DESCRIPTION

・

・With TO-126 package

・High breakdown voltage

APPLICATIONS

・For use in line-operated equipment

such as audio output amplifiers;

low-current ,high-voltage converters;

and AC line relays

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5655

275

2N5656

325

VCBO

Collector-base voltage

2N5657

Open emitter

375

V

2N5655

250

2N5656

300

VCEO

Collector-emitter voltage

2N5657

Open base

350

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

0.5

A

ICM

Collector current-Peak

1.0

A

IB

Base current

0.25

A

PD

Total power dissipation

TC=25℃

20

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

6.25

℃/W

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