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2N5879 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2N5879
Bauteilbeschribung  Silicon PNP Power Transistors
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5879 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2N5879 2N5880
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5879
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5880
IC=-0.2A ;IB=0
-80
V
VCEsat-1
Collector-emitter saturation voltage
IC=-7A;IB=-0.7A
-1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-15A;IB=-3.75A
-4.0
V
VBEsat
Base-emitter saturation voltage
IC=-15A;IB=-3.75A
-2.5
V
VBE
Base-emitter on voltage
IC=-6A ; VCE=-4V
-1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
-0.5
mA
2N5879
VCE=-30V; IB=0
ICEO
Collector cut-off current
2N5880
VCE=-40V; IB=0
-1.0
mA
ICEX
Collector cut-off current
VCE=ratedVCE; VBE=-1.5V
TC=150℃
-0.5
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
hFE-1
DC current gain
IC=-2A ; VCE=-4V
35
hFE-2
DC current gain
IC=-6A ; VCE=-4V
20
100
hFE-3
DC current gain
IC=-15A ; VCE=-4V
4
fT
Trainsistion frequency
IC=-1A ; VCE=-10V
4
MHz



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