2N5956 datasheet(1/3 Pages) ISC

Teilenummer	2N5956

Bauteilbeschribung	Silicon PNP Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N5954 2N5955 2N5956

DESCRIPTION

・With TO-66 package

・Low collector saturation voltage

・Excellent safe operating area

・Complement to type 2N6372/6373/6374

APPLICATIONS

・Designed for driver circuits,switching

and amplifier applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5954

-90

2N5955

-70

VCBO

Collector-base voltage

2N5956

Open emitter

-50

V

2N5954

-80

2N5955

-60

VCEO

Collector-emitter voltage

2N5956

Open base

-40

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-6

A

IB

Base current

-2

A

PD

Total Power Dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

4.3

℃/W

Fig.1 simplified outline (TO-66) and symbol

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