2N6109 datasheet(1/3 Pages) ISC

Teilenummer	2N6109

Bauteilbeschribung	Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6107 2N6109 2N6111

DESCRIPTION

・With TO-220 package

・Complement to NPN type:

2N6288; 2N6290 ;2N6292

APPLICATIONS

・Power amplifier and switching

circuits applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6107

-40

2N6109

-60

VCBO

Collector-base voltage

2N6111

Open emitter

-80

V

2N6107

-30

2N6109

-50

VCEO

Collector-emitter voltage

2N6111

Open base

-70

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-7

A

ICM

Collector current-peak

-10

A

IB

Base current

-3

A

PT

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

3.125

℃/W

Fig.1 simplified outline (TO-220) and symbol

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