| Datenblatt-Suchmaschine für elektronische Bauteile |
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2N6653 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6653 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6653 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V V(BR)CBO Collector-emitter breakdown voltage IC=1mA ; IE=0 350 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 1.8 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 1.8 V ICEV Collector cut-off current VCE=350V;VBE(off)=-1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE -2 DC current gain IC=15A ; VCE=5V 10 fT Transition frequency IC=0.5A ; VCE=10V 15 MHz |
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