2SB337 datasheet(1/2 Pages) ISC

Teilenummer	2SB337

Bauteilbeschribung	isc Silicon PNP Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2SB337

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -0.29V(Typ.) @IC= -4A

·High Power Dissipation-

: PC= 30W(Max)@TC=55℃

APPLICATIONS

·Designed for audio frequency power output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCER

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current-Continuous

-7

A

IE

Emitter Current-Continuous

7

A

IB

B

Base Current-Continuous

-1

A

PC

Collector Power Dissipation

@TC=55℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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