2SB631 datasheet(1/4 Pages) ISC

Teilenummer	2SB631

Bauteilbeschribung	2SB631K

PDF	4 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB631 2SB631K

DESCRIPTION

・

・With TO-126 package

・Complement to type 2SD600/K

・High breakdown voltage VCEO:-100/-120V

・High current: -1A

・Low saturation voltage,excellent hFE linearity

APPLICATIONS

・For low-frequency power

amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2SB631

-100

VCBO

Collector-base voltage

2SB631K

Open emitter

-120

V

2SB631

-100

VCEO

Collector-emitter voltage

2SB631K

Open base

-120

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current (DC)

-1

A

ICM

Collector current-Peak

-2

A

Ta=25℃

1

PD

Total power dissipation

TC=25℃

8

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Ähnliche Teilenummer - 2SB631

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Sanyo Semicon Device	2SB631	106Kb / 3P	100V/120V, 1A Low-Frequency Power Amp Applications
Sanyo Semicon Device	2SB631	126Kb / 4P	100V/120V, 1A Low-Frequency Power Amplifier Applications
Savantic, Inc.	2SB631	159Kb / 4P	Silicon PNP Power Transistors
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