| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SB705 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB705 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB705/705A/705B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB705 -140 2SB705A -150 V(BR)CEO Collector-emitter breakdown voltage 2SB705B IC=-25mA; IB=0 -160 V VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V VBEsat Base-emitter saturation voltage IC=-5A;IB=-0.5 A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-50mA ; VCE=-5V 20 hFE-2 DC current gain IC=-2A ; VCE=-5V 40 200 fT Transition frequency IC=-0.2A ; VCE=-5V 17 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 430 pF hFE-2 classifications S R Q 40-80 60-120 100-200 |
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