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2SB1478 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1478 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1478 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE=0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -2mA; IC=0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -20mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A, IB= -20mA B -2.5 V ICBO Collector Cutoff current VCB= -100V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -5V, IC= 0 -2 mA hFE DC Current Gain IC= -2A; VCE= -3V 2000 20000 isc Website:www.iscsemi.cn |
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