2SC937 datasheet(1/2 Pages) ISC

Teilenummer	2SC937

Bauteilbeschribung	isc Silicon NPN Power Transistor

PDF	2 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC937

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1200V(Min)

·High Reliability

APPLICATIONS

·Designed for TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1200

V

VCEO

Collector-Emitter Voltage

500

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current- Continuous

2.5

A

ICP

Collector Current-Pulse

6

A

PC

Collector Power Dissipation

@ TC= 25℃

22

W

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature Range

-45~125

℃

isc Website：www.iscsemi.cn

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