| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1061 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1061 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 4 V IC Collector current (DC) 3 A ICM Collector current-peak 8 A IB Base current (DC) 0.5 A PC Collector power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal resistance from junction to case 5.0 ℃/W |
Ähnliche Teilenummer - 2SC1061 |
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Ähnliche Beschreibung - 2SC1061 |
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