2SC1569 datasheet(1/2 Pages) ISC

Teilenummer	2SC1569

Bauteilbeschribung	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC1569

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

:V(BR)CEO= 300V(Min)

·DC Current Gain-

: hFE= 40-170 @IC= 50mA, VCE= 10V

·High Current-Gain Bandwidth Product

APPLICATIONS

·Designed for color TV chroma output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

150

mA

IE

Emitter Current-Continuous

-150

mA

Collector Power Dissipation

@ Ta=25℃

1.5

PC

Collector Power Dissipation

@ TC=25℃

12.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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