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2SC1847 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1847 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1847 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0 40 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 50 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 1 μA ICEO Collector cut-off current VCE=10V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V 80 220 COB Output capacitance IE=0 ; VCB=20V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCB=5V,f=200MHz 150 MHz hFE Classifications Q R 80-160 120-220 |
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