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2SC3083 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SC3083
Bauteilbeschribung  Silicon NPN Power Transistors
PDF  4 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3083 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC3083 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC3083 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC3083 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC3083 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC3083
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ;RBE=∞
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.4A ; VCE=5V
15
50
hFE -2
DC current gain
IC=2A ; VCE=5V
8
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
40
pF
fT
Transition frequency
IC=0.4A ; VCE=10V
20
MHz
Switching times
ton
Turn-on time
1.0
μs
ts
Storage time
2.5
μs
tf
Fall time
IC=3A ;IB1=-IB2=0.6A
RL=66.6Ω,VCC=200V
1.0
μs
hFE-1 classifications
L
M
N
15-30
20-40
30-50



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