2SC3181N datasheet(1/4 Pages) ISC

Teilenummer	2SC3181N

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	4 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3181N

DESCRIPTION

・With TO-3P(I) package

・Complement to type 2SA1264N

APPLICATIONS

・Power amplifier applications

・Recommend for 55W high fidelity audio

frequency amplifier output stage

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

120

V

VCEO

Collector-emitter voltage

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

8

A

IB

Base current

0.8

A

PT

Total power dissipation

TC=25℃

80

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3P(I)) and symbol

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2SC3181N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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