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2SC3353 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SC3353
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3353 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3353
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 3A
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
3
A
Collector Power Dissipation
@Ta=25℃
2
PC
Collector Power Dissipation
@TC=25℃
40
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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