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2SC3549 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3549 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION ·High Voltage ·High Speed Switching ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solids state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3 A IB B Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W isc Website:www.iscsemi.cn |
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Ähnliche Beschreibung - 2SC3549 |
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