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2SC3659 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3659 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3659 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICBO Collector Cutoff Current VCE= 1400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs isc Website:www.iscsemi.cn 2 |
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