2SD424 datasheet(1/3 Pages) ISC

Teilenummer	2SD424

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD424

DESCRIPTION

・With TO-3 package

・Complement to type 2SB554

・High power dissipation

・High collector-emitter breakdown voltage

: VCEO=180V(min)

APPLICATIONS

・Power amplifier applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

180

V

VCEO

Collector-emitter voltage

Open base

180

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

15

A

IB

Base current

1.5

A

PC

Collector power dissipation

TC=25℃

150

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3) and symbol

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