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2SD425 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD425
Bauteilbeschribung  Silicon NPN Power Transistors
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD425 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SD425 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD425 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD425 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD425 2SD426
DESCRIPTION
・With TO-3 package
・Complement to type 2SB555/556
・High power dissipation
APPLICATIONS
・Power amplifier applications
・Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD425
140
VCBO
Collector-base voltage
2SD426
Open emitter
120
V
2SD425
140
VCEO
Collector-emitter voltage
2SD426
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IE
Emitter current
12
A
PC
Collector power dissipation
TC=25℃
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Fig.1 simplified outline (TO-3) and symbol


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