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2SD641 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD641 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD641 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-Peak 30 A IB Base current 6 A PT Total power dissipation TC=25℃ 150 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb Thermal resistance from junction to mounting base 1.0 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Ähnliche Teilenummer - 2SD641 |
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Ähnliche Beschreibung - 2SD641 |
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