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2SD687 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD687 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD687 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 40 V VCEsat Collector-emitter saturation voltage IC=2A; IB=4mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=4mA 2.0 V ICBO Collector cut-off current VCB=60V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 Switching times ton Turn-on time 0.1 μs ts Storage time 1.0 μs tf Fall time IB1=-IB2=6mA VCC=30V;RL=10Ω 0.2 μs |
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