| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD970 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD970 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD970 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;RBE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V ICBO Collector cut-off current VCB=120V; IE=0 100 μA ICEO Collector cut-off current VCE=100V; RBE=∞ 10 μA hFE DC current gain IC=4A ; VCE=3V 1000 20000 Switching times ton Turn-on time 0.4 μs ts Storage time 5.4 μs tf Fall time IC=4A ;IB1=-IB2=8mA 1.1 μs |
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