2SD1193 datasheet(1/3 Pages) ISC

Teilenummer	2SD1193

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1193

DESCRIPTION

・With TO-3PN package

・Complement to type 2SB883

・High DC current gain

・High current capacity and wide ASO

・Low saturation voltage

APPLICATIONS

・Motor drivers, printer hammer drivers,

relay drivers,voltage regulator control.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VCBO

Collector-base voltage

Open emitter

70

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current (DC)

15

A

ICP

Collector current (Pulse)

20

A

PC

Collector power dissipation

TC=25℃

70

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

Ähnliche Teilenummer - 2SD1193

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Sanyo Semicon Device	2SD1193	113Kb / 4P	Driver Applications?????????
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2SD1193 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD1193 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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