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2SD1850 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1850 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1850 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V hFE-1 DC Current Gain IC= 1A; VCE= 5V 5 25 hFE-2 DC Current Gain IC= 6A; VCE= 5V 4.5 VCB= 1000V; IE= 0 10 μA ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA fT Transition Frequency IC= 1A; VCE= 10V 2 MHz Switching Times, Resistive Load ts Storage Time 1.5 μs tf Fall Time IC= 6A; IB1= 1.5A; IB2= -3A, VCC= 200V 0.2 μs isc Website:www.iscsemi.cn |
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