| Datenblatt-Suchmaschine für elektronische Bauteile |
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BD132 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD132 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors BD132 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.7 V VBEsat-1 Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V VCB=-50V; IE=0 -50 nA ICBO Collector cut-off current VCB=-50V; IE=0 Tj=150℃ -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 nA hFE-1 DC current gain IC=-0.5A ; VCE=-12V 40 hFE-2 DC current gain IC=-2A ; VCE=-1V 20 fT Transition frequency IC=-0.25A; VCE=-5V ;f=100MHz 60 MHz |
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