BD158 datasheet(1/2 Pages) ISC

Teilenummer	BD158

Bauteilbeschribung	isc Silicon NPN Power Transistor

PDF	2 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD158

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: VCEO(SUS) = 300V(Min)

·DC Current Gain-

: hFE = 30~240(Min) @ IC= 50mA

APPLICATIONS

·Designed for power output stages for television, radio,

phonograph and other consumer product applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

325

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

0.5

A

ICM

Collector Current-Peak

1.0

A

IB

B

Base Current-Continuous

0.25

A

PC

Collector Power Dissipation

TC=25℃

20

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃/W

isc Website：www.iscsemi.cn

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