BD433 datasheet(1/3 Pages) ISC

Teilenummer	BD433

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD433/435/437

DESCRIPTION

・

・With TO-126 package

・Complement to type BD434/436/438

APPLICATIONS

・For medium power linear and

switching applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD433

22

BD435

32

VCBO

Collector-base voltage

BD437

Open emitter

45

V

BD433

22

BD435

32

VCEO

Collector-emitter voltage

BD437

Open base

45

V

VEBO

Emitter -base voltage

Open collector

5

V

IC

Collector current (DC)

4

A

ICM

Collector current-Peak

7

A

IB

Base current

1

A

PC

Collector power dissipation

TC=25℃

36

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Ähnliche Teilenummer - BD433

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	BD433	70Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS Jun-1997
Siemens Semiconductor G...	BD433	180Kb / 5P	NPN SILICON EPIBASE TRANSISTORS
Siemens Semiconductor G...	BD433	183Kb / 5P	PNP SILICON EPIBASE TRANSISTORS
Fairchild Semiconductor	BD433	44Kb / 5P	Medium Power Linear and Switching Applications
STMicroelectronics	BD433	53Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS Feb-2003

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BD433 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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