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BD720 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BD720
Bauteilbeschribung  isc Silicon PNP Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD720 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD720
DESCRIPTION
·DC Current Gain-
: hFE= 40@ IC= -0.5A
·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -60V(Min)
·Complement to type BD719
APPLICATIONS
·Designed for use in audio output and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-7
A
IB
B
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃/W
isc Website：www.iscsemi.cn


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