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BD801 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BD801
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD801 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD801
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Saturation Voltage
·Complement to Type BD802
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
B
Base Current-Continuous
3
A
PC
Collector Power Dissipation
TC=25℃
65
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃/W
isc Website：www.iscsemi.cn


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