BD802 datasheet(1/2 Pages) ISC

Teilenummer	BD802

Bauteilbeschribung	isc Silicon PNP Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD802

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Low Saturation Voltage

·Complement to Type BD801

APPLICATIONS

·Designed for a wide variety of medium-power switching and

amplifier applications , such as series and shunt regulators

and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

IB

B

Base Current-Continuous

-3

A

PC

Collector Power Dissipation

TC=25℃

65

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.92

℃/W

isc Website：www.iscsemi.cn

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