BDT62 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistors

BDT62/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT62

-60

BDT62A

-80

BDT62B

-100

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDT62C

IC= -30mA; IB= 0

-120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A; IB= -12mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -8A; IB= -80mA

-2.5

VBE(on)

Base-Emitter On Voltage

IC= -3A; VCE= -3V

-2.5

BDT62

VCB= -60V; IE= 0

VCB= -30V; IE= 0; TJ=150℃

-0.2

-2.0

BDT62A

VCB= -80V; IE= 0

VCB= -40V; IE= 0; TJ=150℃

-0.2

-2.0

BDT62B

VCB= -100V; IE= 0

VCB= -50V; IE= 0; TJ=150℃

-0.2

-2.0

ICBO

Collector

Cutoff Current

BDT62C

VCB= -120V; IE= 0

VCB= -60V; IE= 0; TJ=150℃

-0.2

-2.0

BDT62

VCE= -30V; IB= 0

-0.5

BDT62A

VCE= -40V; IB= 0

-0.5

BDT62B

VCE= -50V; IB= 0

-0.5

ICEO

Collector

Cutoff Current

BDT62C

VCE= -60V; IB= 0

-0.5

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

hFE-1

DC Current Gain

IC= -3A; VCE= -3V

1000

hFE-2

DC Current Gain

IC= -10A; VCE= -3V

200

VECF

C-E Diode Forward Voltage

IE= -3A

-2.0

Switching Times

ton

Turn-On Time

0.5

μs

toff

Turn-Off Time

IC= -3A; IB1= -IB2= -12mA

2.5

μs

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