BDV65A datasheet(1/3 Pages) ISC

Teilenummer	BDV65A

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDV65/65A/65B/65C

DESCRIPTION

・With TO-3PN package

・Complement to type BDV64/64A/64B/64C

・DARLINGTON

・High DC current gain

APPLICATIONS

・For use in general purpose amplifier

applications.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BDV65

60

BDV65A

80

BDV65B

100

VCBO

Collector-base voltage

BDV65C

Open emitter

120

V

BDV65

60

BDV65A

80

BDV65B

100

VCEO

Collector-emitter voltage

BDV65C

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

12

A

ICM

Collector current-peak

15

A

IB

Base current

0.5

A

TC=25℃

125

PC

Collector power dissipation

Ta=25℃

3.5

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

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Mospec Semiconductor	BDV65A	170Kb / 4P	POWER TRANSISTORS(12A,125W)
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BDV65A Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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