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BDX62B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BDX62B
Bauteilbeschribung  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX62B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX62/A/B/C
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 1000(Min)@ IC= -3A
·Complement to Type BDX63/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
BDX62A
-100
BDX62B
-120
VCBO
Collector-Base
Voltage
BDX62C
-140
V
BDX62
-60
BDX62A
-80
BDX62B
-100
VCEO
Collector-Emitter
Voltage
BDX62C
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
B
Base Current-Continuous
-0.15
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.94
℃/W
isc Website：www.iscsemi.cn


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