BDY53 datasheet(1/2 Pages) ISC

Teilenummer	BDY53

Bauteilbeschribung	isc Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY53

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)=60V(Min.)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.1 V(Max)@ IC = 4A

·High Switching Speed

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

12

A

IB

B

Base Current

5

A

PC

Collector Power Dissipation@TC=25℃

60

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

isc Website：www.iscsemi.cn

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