BU126 datasheet(1/3 Pages) ISC

Teilenummer	BU126

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU126

DESCRIPTION

・

・With TO-3 package

・High breakdown voltage

APPLICATIONS

・For voltage regulator ,inverter,switching

mode power supply applications

PINNING(see fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

750

V

VCEO

Collector-emitter voltage

Open base

300

V

IC

Collector current

3.0

A

ICM

Collector current-peak

6.0

A

IB

Base current

2.0

A

PT

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-65~125

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance junction to case

2.5

K/W

Fig.1 simplified outline (TO-3) and symbol

Ähnliche Teilenummer - BU126

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Mospec Semiconductor	BU126	115Kb / 3P	POWER TRANSISTORS(3A,300V,30A)
Boca Semiconductor Corp...	BU126	121Kb / 3P	HIGH VOLTAGE POWER TRANSISTORS
Savantic, Inc.	BU126	110Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BU126	111Kb / 3P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	BU126	123Kb / 2P	Silicon NPN Power Transistors

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BU126 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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