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BU506F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BU506F
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU506F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU506F
DESCRIPTION
·High Voltage
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers and in line-operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
3
A
IBM
Base Current-Peak
5
A
PC
Collector Power Dissipation
@ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
6.35
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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