BU931P datasheet(1/3 Pages) ISC

Teilenummer	BU931P

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU931P

DESCRIPTION

·

·With TO-3PN package

·DARLINGTON

·High breakdown voltage

APPLICATIONS

·High ruggedness electronic ignitions.

·High voltage ignition coil driver

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

500

V

VCEO

Collector-emitter voltage

Open base

400

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

15

A

ICM

Collector current -peak

30

A

IB

Base current

1

A

IBM

Base current -peak

5

A

PT

Total power dissipation

TC=25℃

135

W

Tj

Max.operating junction temperature

175

℃

Tstg

Storage temperature

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-case

Thermal resistance junction case

1.1

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

Ähnliche Teilenummer - BU931P

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	BU931P	73Kb / 7P	HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON Sep-1999
Savantic, Inc.	BU931P	136Kb / 3P	Silicon NPN Power Transistors
STMicroelectronics	BU931P	786Kb / 13P	High voltage ignition coil driver NPN power Darlington transistors 02-Dec-2009
Savantic, Inc.	BU931P	137Kb / 3P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	BU931P	136Kb / 2P	Silicon NPN Power Transistor

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