BUL416 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL416

ELECTRICAL CHARACTERISTICS

TC =25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; L= 25mH

800

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 4A; IB= 1.33A

3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 4A; IB= 1.33A

1.5

ICES

Collector Cutoff Current

VCE= 1600V; VBE= 0

VCE= 1600V; VBE= 0; TC= 125℃

0.1

0.5

ICEO

Collector Cutoff Current

VCE= 800V; IB= 0

0.25

hFE-1

DC Current Gain

IC= 10mA; VCE= 5V

hFE-2

DC Current Gain

IC= 0.7A; VCE= 5V

Switching Times, Inductive Load

Storage Time

2.3

μs

Fall Time

IC= 3A; VCL= 200V; L= 200μH;

IB1= 1A; VBE(off)= -5V; RBB= 0Ω

0.65

μs

hFE-2 Classifications

12-27

25-40

isc Website：www.iscsemi.cn

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