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BUT12AF Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUT12AF
Bauteilbeschribung  Silicon NPN Power Transistors
PDF  3 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT12AF Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUT12AF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUT12AF Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUT12AF Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT12F BUT12AF
DESCRIPTION
・
・With TO-220Fa package
・High voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BUT12F
850
VCBO
Collector-base voltage
BUT12AF
Open emitter
1000
V
BUT12F
400
VCEO
Collector-emitter voltage
BUT12AF
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
TC=25℃
23
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
Thermal resistance from junction to ambient
55
K/W
Fig.1 simplified outline (TO-220Fa) and symbol


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