BUV40 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUV40

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

125

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5.5A; IB= 0.275A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 11A ;IB= 1.1A

0.9

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 15A ;IB= 1.875A

1.2

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 11A ;IB= 1.1A

1.6

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 15A ;IB= 1.875A

1.9

ICER

Collector Cutoff Current

VCE= 250V;RBE= 10Ω

VCE= 250V;RBE= 10Ω;TC=100℃

1.0

5.0

ICEV

Collector Cutoff Current

VCE= 250V;VBE= -1.5V

VCE= 250V;VBE= -1.5V;TC=100℃

1.0

5.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

Switching Times, Resistive Load

Rise Time

1.0

μs

Storage Time

1.0

μs

Fall Time

IC= 15A; IB1= 1.8A; VCC= 100V;

RB2= 1.3Ω; VBB= -5V, tp= 30μs

0.3

μs

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