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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BUV42A Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV42A Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV42A DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.9V(Max.) @IC= 4A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE=-1.5V 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 18 A IB B Base Current-Continuous 2.5 A IBM Base Current- Peak 4 A PC Collector Power Dissipation @TC=25℃ 120 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W isc Website：www.iscsemi.cn |
Ähnliche Teilenummer - BUV42A |
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Ähnliche Beschreibung - BUV42A |
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