BUY69B datasheet(1/3 Pages) ISC

Teilenummer	BUY69B

Bauteilbeschribung	Silicon NPN Power Transistors

PDF	3 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUY69A BUY69B BUY69C

DESCRIPTION

・With TO-3 package

・High voltage capability

APPLICATIONS

・For horizontal deflection output stage

of CTV receivers and high voltalge,

fast switching and industrial applications

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BUY69A

1000

BUY69B

800

VCBO

Collector-base voltage

BUY69C

Open emitter

500

V

BUY69A

400

BUY69B

325

VCEO(SUS)

Collector-emitter

sustaining voltage

BUY69C

Open base

200

V

VEBO

Emitter-base voltage

Open collector

8

V

IC

Collector current

10

A

ICM

Collector current-peak

15

A

IB

Base current

3.0

A

PD

Total power dissipation

TC=25℃

100

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.75

℃/W

Fig.1 simplified outline (TO-3) and symbol

Ähnliche Beschreibung - BUY69B

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BUY69B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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