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IRF630F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer IRF630F
Bauteilbeschribung  N-channel mosfet transistor
PDF  1 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF630F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRF630F Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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MOSFET
INCHANGE
IRF630F
N-channel mosfet transistor
Features
・With TO-220F package
1 2 3
・Low on-stateand thermal resistance
・Fast switching
・VDSS=200V; RDS(ON)≤0.4Ω;ID=9A
・1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25℃
SYMBOL
PARAMETER
RATING
UNIT
VDSS
Drain-source voltage (VGS=0)
200
V
VGS
Gate-source voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
9
A
Ptot
Total Dissipation@TC=25℃
35
W
Tj
Operating Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TO-220F
Electrical Characteristics Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-source breakdown voltage
VGS=0; ID=0.25mA
200
V
VGS(TH)
Gate threshold voltage
VDS= VGS; ID=1mA
2
4
V
RDS(ON)
Drain-source on-stage resistance
VGS=10V; ID=5.4A
400
mΩ
IGSS
Gate source leakage current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero gate voltage drain current
VDS=200V; VGS=0
10
uA
VSD
Diode forward voltage
IF=9A; VGS=0
1.2
V


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