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PMD1601K Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer PMD1601K
Bauteilbeschribung  isc Silicon NPN Darlingtion Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

PMD1601K Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD1601K
DESCRIPTION
·High DC current gain
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 60V(Min)
·Complement to type PMD1701K
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
B
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25℃
180
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
ThermalResistance, Junction to Case
0.97
℃/W
isc Website：www.iscsemi.cn


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