TIP110 datasheet(1/4 Pages) ISC

Teilenummer	TIP110

Bauteilbeschribung	Silicon NPN Darlington Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Darlington Power Transistors

TIP110/111/112

DESCRIPTION

・With TO-220C package

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

・Complement to type TIP115/116/117

APPLICATIONS

・For industrial use

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP110

60

TIP111

80

VCBO

Collector-base voltage

TIP112

Open emitter

100

V

TIP110

60

TIP111

80

VCEO

Collector-emitter voltage

TIP112

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current-DC

2

A

ICM

Collector current-Pulse

4

A

IB

Base current-DC

50

mA

TC=25℃

50

PC

Collector power dissipation

Ta=25℃

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

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Mospec Semiconductor	TIP110	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Motorola, Inc	TIP110	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP110	269Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors REV 1
Power Innovations Ltd	TIP110	101Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP110	72Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1999

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TIP110 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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