TIP115 datasheet(1/4 Pages) ISC

Teilenummer	TIP115

Bauteilbeschribung	Silicon PNP Darlington Power Transistors

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

TIP115/116/117

DESCRIPTION

・With TO-220C package

・DARLINGTON

・High DC current gain

・Low collector saturation voltage

・Complement to type TIP110/111/112

APPLICATIONS

・For industrial use

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP115

-60

TIP116

-80

VCBO

Collector-base voltage

TIP117

Open emitter

-100

V

TIP115

-60

TIP116

-80

VCEO

Collector-emitter voltage

TIP117

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

--5

V

IC

Collector current-DC

-2

A

ICM

Collector current-Pulse

-4

A

IB

Base current-DC

50

mA

TC=25℃

50

PC

Collector power dissipation

Ta=25℃

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Ähnliche Teilenummer - TIP115

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Mospec Semiconductor	TIP115	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Motorola, Inc	TIP115	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP115	269Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors REV 1
Power Innovations Ltd	TIP115	160Kb / 6P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP115	72Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1999

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ON Semiconductor	2N6667	168Kb / 6P	DARLINGTON POWER TRANSISTORS(PNP SILICON ) April, 2002 ??Rev. 4
NEC	2SB795	149Kb / 3P	PNP SILICON DARLINGTON POWER TRANSISTORS
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