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VB30200C Datenblatt(PDF) 3 Page - Vishay Siliconix

Teilenummer VB30200C
Bauteilbeschribung  Dual High-Voltage Trench MOS Barrier Schottky Rectifier
PDF  5 Pages
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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VB30200C Datenblatt(HTML) 3 Page - Vishay Siliconix

  VB30200C Datasheet HTML 1Page - Vishay Siliconix VB30200C Datasheet HTML 2Page - Vishay Siliconix VB30200C Datasheet HTML 3Page - Vishay Siliconix VB30200C Datasheet HTML 4Page - Vishay Siliconix VB30200C Datasheet HTML 5Page - Vishay Siliconix  
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New Product
V30200C, VF30200C, VB30200C & VI30200C
Vishay General Semiconductor
Document Number: 89014
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
0.1
10
100
0.2
0.4
0.6
0.8
1.2
1.0
Instantaneous Forward Voltage (V)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
0.001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
T
J = 100 °C
100
10
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
t - Pulse Duration (s)
0.1
1
10
0.01
0.1
1
10
100
Junction to Case
V(B,I)30200C
1
10
0.01
0.1
1
10
100
t - Pulse Duration (s)
Junction to Case
VF30200C



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